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| IPB160N04S2-03 OptiMOS(R) - T Power-Transistor Features * N-channel - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (lead free) * Ultra low Rds(on) * 100% Avalanche tested Product Summary V DS R DS(on),max ID 40 2.9 160 V m A PG-TO263-7-3 Type IPB160N04S2-03 Package PG-TO263-7-3 Ordering Code SP0002-18151 Marking P2N0403 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 C T C=25 C I D=80A Value 160 160 640 810 20 300 -55 ... 175 55/175/56 mJ V W C Unit A Rev. 1.0 page 1 2006-03-02 IPB160N04S2-03 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=250 A V DS=40 V, V GS=0 V, T j=25 C V DS=40 V, V GS=0 V, T j=125 C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=60 A, SMD version 40 2.1 3.0 4 V 0.5 62 40 K/W Values typ. max. Unit Zero gate voltage drain current I DSS - 0.1 1 A - 10 1 2.4 100 100 2.9 nA m Rev. 1.0 page 2 2006-03-02 IPB160N04S2-03 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=80 A, T j=25 C 0.84 160 640 1.3 V A Q gs Q gd Qg V plateau V DD=32 V, I D=160 A, V GS=0 to 10 V 27 46 123 5.2 30 75 170 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=20 V, V GS=10 V, I D=160 A, R G=2.2 V GS=0 V, V DS=25 V, f =1 MHz 5300 2150 580 27 45 52 32 ns pF Values typ. max. Unit Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 235A at 25C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) 1) Defined by design. Not subject to production test. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 1.0 page 3 2006-03-02 IPB160N04S2-03 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 320 160 280 140 240 120 200 100 P tot [W] 160 120 80 40 0 0 50 100 150 200 I D [A] 80 60 40 20 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 1000 1 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 1 limited by on-state resistance 10 s 100 s 0.5 100 0.1 0.2 Z thJC [K/W] I D [A] 1 ms 0.1 0.05 0.02 10 0.01 0.01 single pulse 1 0.1 1 10 100 0.001 0 0 0 0 0 0 1 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2006-03-02 IPB160N04S2-03 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 10.0V 7.0V 6.5V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 10 300 250 6.0V 8 R DS(on) [m] 200 6 5.5V I D [A] 150 5.5V 4 6.0V 7.0V 100 2 10.0V 50 5.0V 0 0 1 2 3 0 0 20 40 60 80 100 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 320 280 8 Typ. forward transconductance g fs=f(I D); T j=25 C 300 250 240 200 160 120 100 80 40 0 2 3 4 5 6 7 50 175C 25C 200 g fs [S] I D [A] 150 0 0 80 160 240 320 V GS [V] I D [A] Rev. 1.0 page 5 2006-03-02 IPB160N04S2-03 9 Drain-source on-state resistance R DS(on)=f(T j); I D=80 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 5 4 4 3.5 R DS(on) [m] V GS(th) [V] 3 3 1000A 250A 2 2.5 1 2 0 -60 -20 20 60 100 140 180 1.5 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Typ. Forward characteristics of reverse diode I F=f(V SD) parameter: T j 10000 1000 Ciss Coss 25 C 100 175 C C [pF] 1000 Crss I F [A] 10 1 0.0 100 0 5 10 15 20 25 30 0.5 1.0 1.5 V DS [V] V SD [V] Rev. 1.0 page 6 2006-03-02 IPB160N04S2-03 13 Typ. avalanche energy E AS=f(TJ) parameter: I D=80A, V DD=25V 900 800 10 700 600 8 14 Typ. gate charge V GS=f(Q gate); I D=160A pulsed parameter: V DD 12 8V 32V E AV [mJ] V GS [V] 25 75 125 175 500 400 300 200 6 4 2 100 0 0 0 20 40 60 80 100 120 T J [C] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 47 V GS Qg 45 V BR(DSS) [V] 43 41 V g s(th) 39 37 Q g (th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q gate 35 T j [C] Rev. 1.0 page 7 2006-03-02 IPB160N04S2-03 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 2004 All Rights Reserved. * Pb-free lead plating; RoHS compliant Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-03-02 |
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